New paper on noise in bipolar BHJ devices

Following the work of Aled Williams, who examined how noise can be used to investigate morphology in unipolar diodes, we have published a further paper investigating whether the technique can be extended to bipolar devices where both electron and hole current flows.  In it we make a range of P3HT:PCBM devices with varying blend composition and morphology and show that we can indeed use 1/f noise to understand both what the morphology is and what it limiting the performance of the OPV devices.  This may point the way to 1/f noise being used to investigate structure in other BHJ devices.

Well done Kenichi on his first paper!

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